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ES 2070 – Electronics I

At a glance

  • 4 lecture hours per week
  • 4 credits



Course Description

  • Semiconductor materials (Ge, Si, GaAs), covalent bond, energy levels
  • p-type and n-type material, electrons vs. holes, minority/majority carriers
  • Study of diode characteristics (forward and reverse bias), load line analysis
  • Design principles and construction  of various diodes
    • PN junction diodes, Zener diodes, photo diodes, LEDs, Varactors
    • Schottky diodes, PIN diodes, Solar cells, Tunnel diodes
  • Transformer principles, and its operation and construction
  • Design and analysis of half-wave, full-wave, and bridge rectifiers circuits
    • Computation and measurement of DC and peak and RMS voltages
  • Design and analysis of diode-based series/parallel clipper circuits
  • Design and analysis of diode-based clamper circuits
  • Design of clipper and clampers for generating various output waveforms
  • Design of voltage doubler circuits
  • Bipolar Junction Transistor (BJT): operation and principles
    • Common emitter configuration, load line analysis, input and output characteristics

Learning Resources

  • Boylestad, R. L., & Nashelsky, L. (2012). Electronic devices and circuit theory (11th edition). Pearson.